ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,178, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"PCRAM structure" was invented by Chao-I Wu (Zhubei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes the following items. A substrate. A bottom electrode disposed over the substrate. An insulating layer disposed over the bottom electrode, the insulating layer having a through hole defined in the insulating layer. A heater disposed in the through hole. A phase change material layer disposed over the heater. A selector layer disposed over the phase change material layer. An intermediate layer disposed over the thr...