US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "MIM capacitor and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,942, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"MIM capacitor and method of forming the same" was invented by Hsing-Lien Lin (Hsinchu, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan), Yao-Wen Chang (Taipei, Taiwan), Jui-Lin Chu (Hsinchu, Taiwan) and Cheng-Te Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal-insulator-metal (MIM) capacitor and methods of forming the same are described. In some embodiments, the method includes forming an opening having a first depth in one or more dielectric layers, depositing a layer in the opening and on the one or more dielectric laye...