US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "Metal gate structure and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,356, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Metal gate structure and method of forming the same" was invented by Tsung-Han Shen (Taoyuan, Taiwan), Kevin Chang (New Taipei, Taiwan), Yu-Ming Li (Hsinchu, Taiwan), Chih-Hsiang Fan (Hsinchu, Taiwan), Yi-Ting Wang (Kaohsiung, Taiwan), Wei-Chin Lee (Taipei, Taiwan), Hsien-Ming Lee (Changhua, Taiwan), Chien-Hao Chen (Llan County, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a gate trench over a semiconductor substrate, depositing a gat...