US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "Lithography method with reduced impacts of mask defects" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,429,776, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Lithography method with reduced impacts of mask defects" was invented by Shinn-Sheng Yu (Hsinchu, Taiwan), Ching-Fang Yu (Hsinchu, Taiwan), Wen-Chuan Wang (Hsinchu, Taiwan), Ting-Hao Hsu (Hsinchu, Taiwan), Sheng-Chi Chin (Hsinchu, Taiwan) and Anthony Yen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An extreme ultraviolet lithography method is disclosed. In an example, the EUVL method includes forming a resist layer on a substrate; performing a first exposure process to image a first pattern of a first sub-region of a first mas...