US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 30 for "Gallium nitride-on-silicon devices" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,959, issued on Sept. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gallium nitride-on-silicon devices" was invented by Jun-De Jin (Hsinchu, Taiwan) and Chan-Hong Chern (Palo Alto, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gallium nitride-on-silicon structure is disclosed in which the two-dimensional electron gas (2DEG) layer is a discontinuous layer that includes at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer can be depleted by a p-doped gallium nitride layer that is disposed over a portion of an aluminum gallium nitride layer. Additio...