US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 30 for "FinFET structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,953, issued on Sept. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"FinFET structures and methods of forming the same" was invented by Shih-Chieh Chang (Taipei, Taiwan), Shahaji B. More (Hsinchu, Taiwan) and Cheng-Han Lee (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first fin and a second fin over a substrate, depositing an isolation material surrounding the first and second fins, forming a gate structure along sidewalls and over upper surfaces of the first and second fins, recessing the first and second fins outside of the gate structure to form a first recess i...