US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "FinFET structure with airgap and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,008, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"FinFET structure with airgap and method of forming the same" was invented by Chien Ning Yao (Hsinchu, Taiwan), Kai-Hsuan Lee (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchun County, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin formed on a substrate; and a gate structure disposed over a channel...