US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "FinFET device with source/drain contact extending over dielectric gate" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,962, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"FinFET device with source/drain contact extending over dielectric gate" was invented by Fang Chen (Hsinchu, Taiwan) and Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a first active region and a second fin active region extruded from a semiconductor substrate; an isolation featured formed in the semiconductor substrate and being interposed between the first and second fin active regions; a dielec...