US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 30 for "Ferroelectric memory device with blocking layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,929, issued on Sept. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device with blocking layer" was invented by Tzu-Yu Chen (Kaohsiung, Taiwan), Chu-Jie Huang (Tainan, Taiwan), Wan-Chen Chen (Hsinchu, Taiwan), Fu-Chen Chang (New Taipei, Taiwan), Sheng-Hung Shih (Hsinchu, Taiwan) and Kuo-Chi Tu (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a memory cell comprising a blocking layer configured to block diffusion of metal from an electrode of the memory cell to a ferroelectric layer of the memory cell. More par...