US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 30 for "External magnetic field detection for MRAM device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,214, issued on Sept. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"External magnetic field detection for MRAM device" was invented by Harry-Hak-Lay Chuang (Zhubei, Taiwan), Yuan-Jen Lee (Hsinchu, Taiwan), Tien-Wei Chiang (Taipei, Taiwan) and Yi-Chun Shih (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive random access memory (MRAM) device is provided. The MRAM device includes a main magnetic tunnel junction (MTJ) array comprising a plurality of memory cells configured to store memory data and a reference MTJ array comprising a plurality of reference cells having MTJ structures. Th...