US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 30 for "Extended side contacts for transistors and methods forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,018, issued on Sept. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Extended side contacts for transistors and methods forming same" was invented by Ying-Yu Lai (Taipei, Taiwan), Chih-Hsuan Lin (Hsinchu, Taiwan), Hsi Chung Chen (Tainan, Taiwan) and Chih-Teng Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a source/drain region for a transistor, forming a first inter-layer dielectric over the source/drain region, and forming a lower source/drain contact plug over and electrically coupling to the source/drain region. The lower source/drain contact plug extends into th...