ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,429,783, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"EUV lithography apparatus and operating method for mitigating contamination" was invented by I-Hsiung Huang (Hsinchu, Taiwan), Yung-Cheng Chen (Jhubei, Taiwan) and Tung-Li Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An extreme ultra violet (EUV) lithography apparatus includes a light source that generates an EUV light beam, a scanner that receives the light from a junction with the light source and directs the light to a reticle stage, and a debris catcher disposed on a EUV beam path between the light source and the sc...