US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 30 for "Contact features of semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,390, issued on Sept. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Contact features of semiconductor devices" was invented by Tsui-Ling Yen (Hsinchu County, Taiwan) and Chien-Hung Chen (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes recessing an upper portion of a first dielectric layer disposed over a conductive feature. The method includes filling the recessed upper portion with a second dielectric layer to form a void embedded in the second dielectric layer. The method includes etching the second dielectric layer and the first dielectri...