US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "Composite etch stop layers for sensor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,059, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Composite etch stop layers for sensor devices" was invented by Cheng-Han Lin (Tainan, Taiwan), Chao-Ching Chang (Kaohsiung, Taiwan), Yi-Ming Lin (Tainan, Taiwan), Yen-Ting Chou (Tainan, Taiwan), Yen-Chang Chen (Tainan, Taiwan), Sheng-Chan Li (Tainan, Taiwan) and Cheng-Hsien Chou (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an ...