US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "Bump structure and method of making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,365, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Bump structure and method of making the same" was invented by Wen-Hsiung Lu (Tainan, Taiwan), Ming-Da Cheng (Taoyuan, Taiwan), Su-Fei Lin (Tainan, Taiwan), Hsu-Lun Liu (Tainan, Taiwan), Chien-Pin Chan (Pingzhen, Taiwan) and Yung-Sheng Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist...