US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "2D-channel transistor structure with asymmetric substrate contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,003, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"2D-channel transistor structure with asymmetric substrate contacts" was invented by Cheng-Ting Chung (Hsinchu, Taiwan), Chien-Hong Chen (Hsinchu County, Taiwan), Mahaveer Sathaiya Dhanyakumar (Hsinchu, Taiwan), Hou-Yu Chen (Hsinchu County, Taiwan), Jin Cai (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming the same are provided. A method includes providing a workpiece having a semiconductor structure; depositing a two-dimensional (2D) material lay...