US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Transistor source/drain contacts and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,300, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor source/drain contacts and methods of forming the same" was invented by Meng-Han Chou (Hsinchu, Taiwan), Yi-Syuan Siao (Changhua, Taiwan), Su-Hao Liu (Jhongpu Township, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a source/drain region adjacent a channel region; an inter-layer dielectric on the source/drain region; a source/drain contact extending through the inter-layer dielectric and into the source/drain region; a metal-...