US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Transistor gate structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,321, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor gate structures and methods of forming the same" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Ji-Cheng Chen (Hsinchu, Taiwan), Weng Chang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a first nanostructure; a gate dielectric layer around the first nanostructure; a first p-type work function tuning layer on the gate dielectric layer; a dielectric barrier layer on the first p-type work function tuning layer; and a second p-type work function tunin...