US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Structures of sram cell and methods of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,231, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Structures of sram cell and methods of fabricating the same" was invented by Kuan-Chung Chiu (Hsinchu, Taiwan), Wei-Hua Chen (Hsinchu, Taiwan), Chieh Lee (Hsinchu, Taiwan), Chun-Ying Lee (Hsinchu, Taiwan), Yi-Ching Liu (Hsinchu, Taiwan) and Chia-En Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SRAM cell includes a first n-type channel (n-channel) layer engaged with a first gate layer to form a first device; a first p-type channel (p-channel) layer engaged with the first gate layer to form a second device, the first gat...