US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Static random-access memory (SRAM) device and related SRAM-based compute-in-memory devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,275, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Static random-access memory (SRAM) device and related SRAM-based compute-in-memory devices" was invented by Wei-Xiang You (Kaohsiung, Taiwan), Szuya Liao (Hsinchu, Taiwan) and Cheng-Yin Wang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SRAM cell includes a first inverter cross-coupled to a second inverter. The first inverter includes a first pull-up transistor and a first pull-down transistor, having coupled drains that define a first storage node. The SRAM cell further includes a first N-type pass-gate transistor having...