US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Semiconductor device with metal cap on gate" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,298, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with metal cap on gate" was invented by Jia-Chuan You (Taoyuan, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes a gate electrode, a first spacer, a second spacer, a metal cap, and a dielectric structure. The gate electrode is over a substrate. The first spacer structure extends along a first sidewall of the gate electrode. The second spacer structure extends along a second sidewall of the gate e...