US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Semiconductor device with low-galvanic corrosion structures, and method of making same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,491, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with low-galvanic corrosion structures, and method of making same" was invented by Shahaji B. More (Hsinchu, Taiwan) and Chandrashekhar Prakash Savant (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are methods for manufacturing semiconductor devices that include the operations of forming a first interconnect segment over a semiconductor substrate, forming a cap layer of a first metal over a top surface of the first interconnect segment, and modifying an exposed surface of the cap layer to form ...