US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Semiconductor device structure with nanostructure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,325, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with nanostructure" was invented by Sai-Hooi Yeong (Zhubei, Taiwan), Bo-Feng Young (Taipei, Taiwan) and Ching-Wei Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first nanostructure over the substrate. The semiconductor device structure also includes a gate stack over the substrate and surrounding the first nanostructure and a first source/drain layer surrounding the first nanostructu...