US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Semiconductor device structure with hybrid fins" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,356, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with hybrid fins" was invented by Jin-Aun Ng (Hsinchu, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan), Hung-Li Chiang (Taipei, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and I-Sheng Chen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a substrate and multiple nanostructures over the substrate. The semiconductor device structure also includes a semiconductor fin between the substrate and the nanostructures. The s...