US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,327, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Yi-Bo Liao (Hsinchu, Taiwan) and Lin-Yu Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure, along with methods of forming such, are described. The structure includes a source/drain region and a first conductive feature disposed below the source/drain region. The first conductive feature is electrically connected to the source/drain region. The structure further includes a second conductive feature disposed over ...