US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Semiconductor device including dummy deep trench capacitors and a method of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,538, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device including dummy deep trench capacitors and a method of manufacturing thereof" was invented by Fu-Chiang Kuo (Hsinchu, Taiwan), Yu-Hsin Fang (Hsinchu, Taiwan) and Min-Hsiung Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing the semiconductor device are disclosed. In one aspect, at least one active deep trench capacitor (DTC), the at least one active DTC including a plurality of conductive layers and an insulating layer disposed between adjacent conductive...