US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Semiconductor device having epitaxy source/drain regions" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,358, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device having epitaxy source/drain regions" was invented by Yi-Jing Lee (Hsinchu, Taiwan), Kun-Mu Li (Hsinchu County, Taiwan), Ming-Hua Yu (Hsinchu, Taiwan) and Tsz-Mei Kwok (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IC structure includes a first fin structure, a first epitaxial structure, first sidewall spacers, a second fin structure, a second epitaxial structure, and second sidewall spacers. The first epitaxial structure is on the first structure. The first sidewall spacers are respectively on opposite si...