US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,348, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Po-Hsien Cheng (Hsinchu, Taiwan) and Zhen-Cheng Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a semiconductor fin over a substrate; forming first, second, and third gate structures crossing the semiconductor fin; forming first and second epitaxial source/drain structures on opposite sides of the first gate structure, and forming third and fourth source/drain epitaxial structures on opposite sides of the third gate structure; f...