US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Semiconductor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,346, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Cheng-Yu Yang (Xihu Township, Taiwan), Feng-Cheng Yang (Zhudong Township, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Yen-Ming Chen (Chu-Pei, Taiwan) and Yen-Ting Chen (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a fin field effect transistor (FinFET) with a cut metal gate (CMG) and a method of manufacturing the semiconductor device are described herein. The method includes forming a CMG protective helmet structure at a top portion of a CMG dummy ga...