US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Semiconductor device, memory cell and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,276, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device, memory cell and method of forming the same" was invented by Yu-Chao Lin (Hsinchu, Taiwan) and Tung-Ying Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a memory cell including a selector disposed over a substrate, a memory element and a connecting pad. The selector includes a bottom electrode, an ovonic threshold switch layer on the bottom electrode, an inter-electrode over the ovonic threshold switch layer, and an intermediate layer between the ovonic threshold switch layer and the inter-ele...