US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Rough buffer layer for group III-V devices on silicon" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,295, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Rough buffer layer for group III-V devices on silicon" was invented by Kuei-Ming Chen (New Taipei, Taiwan), Chi-Ming Chen (Zhubei, Taiwan) and Chung-Yi Yu (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present application are directed towards a group III-V device including a rough buffer layer. The rough buffer layer overlies a silicon substrate, a buffer structure overlies the rough buffer layer, and a heterojunction structure overlies the buffer structure. The buffer structure causes band bending an...