US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,517, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same" was invented by Yu-Der Chih (Hsinchu, Taiwan), Wen-Zhang Lin (Hsinchu, Taiwan), Yun-Sheng Chen (Hsinchu, Taiwan), Jonathan Tsung-Yung Chang (Hsinchu, Taiwan), Chrong-Jung Lin (Hsinchu, Taiwan), Ya-Chin King (Hsinchu, Taiwan), Cheng-Jun Lin (Hsinchu, Taiwan) and Wang-Yi Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory device includes a bottom electrode, a top electrode and a resistance c...