US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Passivation for a vertical transfer gate in a pixel sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,390, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Passivation for a vertical transfer gate in a pixel sensor" was invented by Yu-Hung Cheng (Tainan, Taiwan), Tzu-Jui Wang (Fengshan, Taiwan) and Ching I. Li (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A boron (B) layer may be formed as a passivation layer in a recess in which a vertical transfer gate is to be formed. The recess may then be filled with a gate electrode of the vertical transfer gate over the passivation layer (and/or one or more intervening layers) to form the vertical transfer gate. The passivation layer may be ...