ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,274, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Method for MRAM top electrode connection" was invented by Harry-Hak-Lay Chuang (Zhubei, Taiwan), Hung Cho Wang (Taipei, Taiwan), Sheng-Chang Chen (Hsinchu County, Taiwan) and Sheng-Huang Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip including a memory cell overlying a substrate and comprising a top electrode. A sidewall spacer structure is disposed along sidewalls of the memory cell. The sidewall spacer structure comprises a first spacer...