US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Method for forming recesses in a substrate by etching dummy fins" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,568, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Method for forming recesses in a substrate by etching dummy fins" was invented by Wan-Chun Kuan (Chiayi, Taiwan), Chih-Teng Liao (Hsinchu, Taiwan), Yi-Wei Chiu (Kaohsiung, Taiwan) and Tzu-Chan Weng (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure includes a semiconductor substrate having a plurality of semiconductor strips, a first recess being formed by two adjacent semiconductor strips among the plurality of semiconductor strips, a second recess being formed within the first recess, and an isol...