US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Method and structure for air gap inner spacer in gate-all-around devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,297, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method and structure for air gap inner spacer in gate-all-around devices" was invented by Shih-Chiang Chen (Taichung, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Chia-Pin Lin (Hsinchu County, Taiwan) and Yuan-Ching Peng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device a includes a substrate, two source/drain (S/D) features over the substrate, and semiconductor layers suspended over the substrate and connecting the two S/D features. The device further includes a dielectric layer disposed between two adjacent layers of the semi...