US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Metallization layer and fabrication method" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,548, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Metallization layer and fabrication method" was invented by I-Che Lee (Hsinchu, Taiwan), Huai-Ying Huang (Jhonghe, Taiwan) and Ruei-Cheng Shiu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A second metal structure such as a metal plug is formed over a first metal structure, such as a metal line, by causing metal material from the first metal structure to migrate into an opening in a dielectric layer over the first metal structure. The metal material, which may be copper, is of a type that undergoes a reduction in density as it ...