US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Memory devices with dual-side access circuits and methods for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,257, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory devices with dual-side access circuits and methods for operating the same" was invented by Tung-Cheng Chang (Hsinchu, Taiwan), Yu-Fan Lin (Hsinchu, Taiwan), Ku-Feng Lin (Hsinchu, Taiwan), Perng-Fei Yuh (Hsinchu, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a memory array comprising a plurality of non-volatile memory cells, wherein the non-volatile memory cells are arranged along a plurality of access lines that extend along a lateral direction. The memory circuit includes a...