US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Memory device with one-time programmable memory unit and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,260, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device with one-time programmable memory unit and method for fabricating the same" was invented by Harry-Hak-Lay Chuang (Hsinchu County, Taiwan), Wen-Chun You (Yilan County, Taiwan) and Hung-Cho Wang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an one-time-programmable (OTP) memory unit. The OTP memory unit includes a first gate, a first conductive segment and a second conductive segment of a first structure, and a first magnetic tunnel junction (MTJ) component. The first gate is formed acros...