US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Memory device with improved anti-fuse read current" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,423,494, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device with improved anti-fuse read current" was invented by Meng-Sheng Chang (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan), Yao-Jen Yang (Hsinchu, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a programming gate-strip, a read gate-strip, and an array of one-bit memory cells. Each one-bit memory cell includes an anti-fuse structure, a transistor, a terminal conductor, a group of programming conducting lines, and a bit connector. The anti-fuse structure has a dielectr...