US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Memory device and manufacturing thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,274, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsin-Chu, Taiwan).

"Memory device and manufacturing thereof" was invented by Jhon Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to a memory bit cell including two doped regions and four gate structures. Bit line, bit line bar, and word line of the bit cell are formed on a front side of the bit cell and power rails are formed on a back side of the bit cell. In some embodiments, each bit cell includes two word lines."

The patent was filed on Feb. 15, 2023, under Application No. 18/110,321....