ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,279, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Memory cell including programmable resistors with transistor components" was invented by Yu-Der Chih (Hsinchu, Taiwan), Jonathan Tsung-Yung Chang (Hsinchu, Taiwan), Yun-Sheng Chen (Hsinchu, Taiwan), Maybe Chen (Hsinchu, Taiwan), Ya-Chin King (Hsinchu, Taiwan), Wen Zhang Lin (Hsinchu, Taiwan), Chrong Jung Lin (Hsinchu, Taiwan) and Hsin-Yuan Yu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programm...