ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,226, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Macro and SRAM bit cell cooptimizatoin for performance (long/shortwordline combo SRAM)" was invented by Ping-Wei Wang (Hsinchu, Taiwan), Lien-Jung Hung (Hsinchu, Taiwan), Kuo-Hsiu Hsu (Hsinchu, Taiwan), Kian-Long Lim (Hsinchu, Taiwan), Yu-Kuan Lin (Hsinchu, Taiwan), Chia-Hao Pao (Hsinchu, Taiwan), Chih-Chuan Yang (Hsinchu, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan) and Choh Fei Yeap (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array having a plurality of memory cells. Each memory cell of the plur...