US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Ion beam etching chamber with etching by-product redistributor" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,419, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ion beam etching chamber with etching by-product redistributor" was invented by Te-Hsien Hsieh (Kaohsiung, Taiwan) and Lee-Chuan Tseng (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a method of performing an etching process. The method includes generating a plasma within a plasma chamber in communication with a processing chamber. Ions from the plasma are accelerated toward a workpiece within the processing chamber to generate an ion beam. The ion beam performs an etching...