US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Introducing fluorine to gate after work function metal deposition" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,332, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Introducing fluorine to gate after work function metal deposition" was invented by Bo-Wen Hsieh (Miaoli County, Taiwan) and Pei Ying Lai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate dielectric structure is formed over a channel structure. One or more work function (WF) metal layers of a metal gate are formed over the gate dielectric structure. The one or more WF metal layers are treated with a fluorine-containing material. One or more processes are performed to cause fluorine from the fluorine-containing material to...