US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Interconnect structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,537, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Interconnect structure and methods of forming the same" was invented by Yao-Jen Tsai (Kaohsiung, Taiwan), Chih-Fu Chang (Pingtung, Taiwan), Sheng Chiang Hung (Hsinchu, Taiwan) and Chin-Yuan Ko (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a first intermetal dielectric (IMD) layer disposed over a plurality of conductive features and a first passive component disposed on the first IMD layer in a first region of...