US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Gates structures of nanostructure field-effect transistors (nano-FETs) including a plurality of semiconductor based capping materials and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,324, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gates structures of nanostructure field-effect transistors (nano-FETs) including a plurality of semiconductor based capping materials and methods of forming the same" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes nanosheets between the source/drain regions, and a gate structure over the substrate and between the source/drain regions, the gate structure including a gate dielectric material around each ...