US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Gate structures and spacers in semiconductor devices and methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,311, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate structures and spacers in semiconductor devices and methods of manufacturing thereof" was invented by Shih-Yao Lin (New Taipei, Taiwan), Kuei-Yu Kao (Hsinchu, Taiwan), Chen-Ping Chen (Yilan County, Taiwan), Chih-Chung Chiu (Hsinchu, Taiwan), Chih-Han Lin (Hsinchu, Taiwan), Ming-Ching Chang (Hsinchu, Taiwan) and Chao-Cheng Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device is provided. The method includes forming a fin structure extending along a first lateral direction; f...