US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 23 for "Gate-all-around devices with optimized gate spacers and gate end dielectric" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,310, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Gate-all-around devices with optimized gate spacers and gate end dielectric" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, two source/drain (S/D) features; channel layers connecting the S/D features; and a gate structure wrapping around each of the channel layers. The gate structure includes a gate electrode over a gate dielectric layer. The semiconductor structure further includes outer spacers disposed on two opposing sidewalls of the gate st...