ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,334, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"FinFET device and method" was invented by Chih-Han Lin (Hsinchu, Taiwan), Ming-Ching Chang (Hsinchu, Taiwan) and Chao-Cheng Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a fin extending from a substrate, a gate stack over and along a sidewall of the fin, a spacer along a first sidewall of the gate stack and the sidewall of the fin, a dummy gate material along the sidewall of the fin, wherein the dummy gate material is between the spacer and the gate stack, and a first epitaxial source/drain ...